Digital Single Event Transient Trends With Technology Node Scaling

Author

Benedetto, J.M. ; Eaton, P.H. ; Mavis, D.G. ; Gadlage, M. ; Turflinger, T.

Author_Institution

Micro-RDC, Albuquerque, NM

Volume

53

Issue

6

fYear

2006

Firstpage

3462

Lastpage

3465

Abstract

We have measured the single-event-transient (SET) width as a function of cross-section over three CMOS bulk/epitaxial technology nodes (0.25, 0.18 and 0.13 mum) using an identically scaled programmable-delay temporal-latch technique. Both the maximum width of the SET pulse and the cross-section are shown to depend primarily on the supply voltage, with a substantial increase in transient width and cross-section with lower operating potentials

Keywords

CMOS digital integrated circuits; integrated circuit measurement; programmable logic devices; radiation effects; transients; 0.13 micron; 0.18 micron; 0.25 micron; CMOS bulk technology node; SET; epitaxial technology node; error rate; programmable-delay temporal-latch technique; radiation effects; single event upset; single-event-transient width; technology node scaling; transient propagation; CMOS digital integrated circuits; CMOS technology; Frequency; Logic design; Logic devices; Pulse circuits; Pulse measurements; Single event upset; Space vector pulse width modulation; Voltage; Error rate; heavy ion; radiation effects; single event effects; single event transient; single event upset; transient propagation; transient pulse width;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.886044

Filename

4033226