Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator

Author

Bernard, M.F. ; Dusseau, L. ; Boch, J. ; Vaille, J.-R. ; Saigne, F. ; Schrimpf, R.D. ; Lorfevre, E. ; David, J.P.

Author_Institution

Univ. Montpellier II

Volume

53

Issue

6

fYear

2006

Firstpage

3232

Lastpage

3236

Abstract

The impact of the bias condition during irradiation on the total-dose response of a bipolar voltage comparator is investigated. Experimental results obtained with input pins biased asymmetrically during irradiation exhibit completely different total-dose response compared to irradiation with all pins grounded. Circuit analysis shows that asymmetrical biasing of the input stage creates a mismatch of the gain degradation in the transistors constituting the differential pair

Keywords

bipolar analogue integrated circuits; comparators (circuits); network analysis; radiation effects; IC; asymmetrical biasing; bias effects; bipolar analog circuits; bipolar voltage comparator; circuit analysis; differential pair; gain degradation; input pins; input stage; integrated circuits; linear voltage comparator; total-dose response; transistors; Analog circuits; Analog integrated circuits; Bipolar transistors; Circuit analysis; Degradation; Ionizing radiation; Manufacturing; Mirrors; Pins; Voltage; Bipolar analog circuits; circuitry; integrated circuits (ICs); linear voltage comparator; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.885002

Filename

4033237