• DocumentCode
    870002
  • Title

    Damage Equivalence of Heavy Ions in Silicon Bipolar Junction Transistors

  • Author

    Bielejec, E. ; Vizkelethy, G. ; Kolb, N.R. ; King, D.B. ; Doyle, B.L.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3681
  • Lastpage
    3686
  • Abstract
    Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions
  • Keywords
    bipolar transistors; elemental semiconductors; ion beam effects; semiconductor device models; silicon; Messenger-Spratt equation; Si; displacement damage equivalence; heavy ion irradiation; inverse gain degradation; light ions; neutrons; silicon bipolar junction transistors; Degradation; Equations; Gain measurement; Ion beams; Laboratories; Neutrons; Particle beams; Protons; Pulse measurements; Silicon; Damage equivalence; silicon bipolar transistor;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.886231
  • Filename
    4033249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870002