Title :
Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications
Author :
Chang, Charles E. ; Asbeck, Peter M. ; Wang, Keh-Chung ; Brown, Elliott R.
Author_Institution :
Dept. of Electr. Eng., California Univ., San Diego, CA, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
A high-speed digital logic family based on heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs) is proposed. The negative differential resistance of RTDs is used to significantly decrease the static power dissipation. SPICE simulations indicate that propagation delay time below 150 ps at 0.09-mW static power per gate should be obtainable
Keywords :
SPICE; bipolar integrated circuits; circuit analysis computing; heterojunction bipolar transistors; integrated logic circuits; resonant tunnelling devices; 0.09 mW; 150 ps; HBT; RTD; SPICE simulations; heterojunction bipolar transistors; high-speed digital logic family; low power logic; negative differential resistance; power dissipation; propagation delay time; resonant tunneling diodes; static power per gate; Bipolar transistors; CMOS logic circuits; Diodes; Heterojunction bipolar transistors; Laboratories; Logic circuits; Logic devices; Power dissipation; Resonant tunneling devices; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
