DocumentCode :
870194
Title :
Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications
Author :
Chang, Charles E. ; Asbeck, Peter M. ; Wang, Keh-Chung ; Brown, Elliott R.
Author_Institution :
Dept. of Electr. Eng., California Univ., San Diego, CA, USA
Volume :
40
Issue :
4
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
685
Lastpage :
691
Abstract :
A high-speed digital logic family based on heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs) is proposed. The negative differential resistance of RTDs is used to significantly decrease the static power dissipation. SPICE simulations indicate that propagation delay time below 150 ps at 0.09-mW static power per gate should be obtainable
Keywords :
SPICE; bipolar integrated circuits; circuit analysis computing; heterojunction bipolar transistors; integrated logic circuits; resonant tunnelling devices; 0.09 mW; 150 ps; HBT; RTD; SPICE simulations; heterojunction bipolar transistors; high-speed digital logic family; low power logic; negative differential resistance; power dissipation; propagation delay time; resonant tunneling diodes; static power per gate; Bipolar transistors; CMOS logic circuits; Diodes; Heterojunction bipolar transistors; Laboratories; Logic circuits; Logic devices; Power dissipation; Resonant tunneling devices; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.202778
Filename :
202778
Link To Document :
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