DocumentCode
870198
Title
Planar-transistor stability under X ray irradiation
Author
Andr¿¿, B. ; Buxo, J. ; Esteve, Daniel ; Martinot, H. ; Simonne, J.
Author_Institution
Université de Toulouse, Laboratoire de Génie Electrique Faculté des Sciences, Toulouse, France
Volume
2
Issue
11
fYear
1966
fDate
11/1/1966 12:00:00 AM
Firstpage
423
Lastpage
425
Abstract
Experiments on planar transistors irradiated by X rays show drifts of variable importance, according to the type of transistor (p-n-p or n-p-n). As an interpretation of the results, surface-characteristic modification of the e-b diode due to the presence of a silicon-surface-induced charge density is proposed.
Keywords
radiation; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19660356
Filename
4207021
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