Accurate closed-form expressions for the frequency-dependent line parameters of on-chip interconnects on lossy silicon substrate

Author

Weisshaar, Andreas ; Lan, Hai ; Luoh, Amy

Author_Institution

Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

Volume

25

Issue

2

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

288

Lastpage

296

Abstract

Accurate closed-form expressions for the complete frequency-dependent R, L, G, C line parameters of microstrip lines on lossy silicon substrate are presented. The closed-form expressions for the frequency-dependent series impedance parameters are obtained using a complex image method. The frequency-dependent shunt admittance parameters are expressed in closed form in terms of the shunt capacitances obtained in the low and high frequency limits. The proposed closed-form solutions are shown to be in good agreement with the electromagnetic solutions.

Keywords

Green´s function methods; capacitance; coupled transmission lines; eddy current losses; electric admittance; equivalent circuits; inductance; interconnections; microstrip lines; skin effect; transmission line matrix methods; accurate closed-form expressions; complex image method; coupled microstrips; eddy currents; filamental line current; frequency-dependent line parameters; high frequency limits; lossy silicon substrate; low frequency limits; microstrip lines; on-chip interconnects; series impedance parameters; shunt admittance parameters; shunt capacitances; skin depth; transmission line parameters; Closed-form solution; Design automation; Distributed parameter circuits; Earth; Eddy currents; Integrated circuit interconnections; Integrated circuit modeling; LAN interconnection; Radio frequency; Silicon;

fLanguage

English

Journal_Title

Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1521-3323

Type

jour

DOI

10.1109/TADVP.2002.803267

Filename

1049641