• DocumentCode
    870563
  • Title

    Substrate-emitter monolithic inverted transistor structure for low- power high-current-gain applications

  • Author

    Hruby, Ronald J. ; Dunn, William R. ; Cress, Steven B.

  • Volume
    6
  • Issue
    3
  • fYear
    1971
  • fDate
    6/1/1971 12:00:00 AM
  • Firstpage
    115
  • Lastpage
    119
  • Abstract
    This paper describes the development of a super-beta transistor capable of achieving current gains in excess of 1000. The basic structure (similar to collector diffused isolation) is shown, and a detailed description given, indicating the type of optimization achieved at low current levels and low saturation voltages. Cross sectional views and a photomicrograph show some of this transistor´s potential including bilateral capability.
  • Keywords
    Bipolar transistors; Monolithic integrated circuits; bipolar transistors; monolithic integrated circuits; Batteries; Biological materials; Biomedical telemetry; Circuits; Conductivity; Geometry; Impurities; Low voltage; Missiles; NASA;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1971.1049665
  • Filename
    1049665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870563