DocumentCode
871090
Title
Limiting Upset Cross Sections of SEU Hardened SOI SRAMs
Author
Liu, Michael S. ; Liu, Harry Y. ; Brewster, Nancy ; Nelson, Dave ; Golke, Keith W. ; Kirchner, Gary ; Hughes, Harold L. ; Campbell, Arthur ; Ziegler, James F.
Author_Institution
Honeywell Defense & Space Electron. Syst., Plymouth, MN
Volume
53
Issue
6
fYear
2006
Firstpage
3487
Lastpage
3493
Abstract
This paper discusses the practical limits of proton and heavy ion induced single event upset cross sections in SEU hardened deep submicron SOI SRAMs. Non-conventional "double-hit" mechanisms are hypothesized to explain test results
Keywords
CMOS integrated circuits; SRAM chips; integrated circuit design; integrated circuit modelling; proton effects; radiation hardening (electronics); silicon-on-insulator; SEU hardened SOI CMOS SRAMs; heavy ion radiation; proton radiation; single event upset cross sections; Capacitors; DH-HEMTs; Delay effects; Feedback; Laboratories; Protons; Random access memory; Resistors; Single event upset; Testing; SEU; SOI; SRAM; upset mechanism;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2006.886216
Filename
4033661
Link To Document