DocumentCode
871091
Title
Varactor S-Band Direct Phase Modulator
Author
Kim, C.S. ; Lee, C.W. ; Borer, J.R.
Volume
1
Issue
1
fYear
1966
Firstpage
45
Lastpage
51
Abstract
This paper describes the design technique and the test results for an S-band direct phase modulator with extremely linear phase characteristics. A modulation index of 2.4 radians (300/spl deg/ phase variation) with a phase distortion of less than 0.5 percent was obtained at 2.2 GHz. The modulator consisted of two cascaded stages, each stage employing a pair of low-loss varactor diodes. Amplitude modulation was minimized by operating the diodes in a reflection mode. The phase characteristic of an ideal reflection type modulator is a nonlinear function of a signal voltage (2 tan/sup -1//spl omega/C(v)/Y/sub0c/, where C(v) is the diode capacitance andY/sub 0c/ is the circulator characteristic admittance). A new technique was developed to linearize the phase characteristics. Consideration was also given to improvement of the S-band frequency response. The effect of the series resistance of the diode on the amplitude modulation is discussed. The modulator will handle over 20 mW S-band power with no appreciable change in its operational characteristics. The modulation bandwidth is from dc to 20 MHz.
Keywords
Modulation/demodulation; Phase modulation; Varactors; Admittance; Amplitude modulation; Capacitance; Diodes; Phase distortion; Phase modulation; Reflection; Testing; Varactors; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1966.1049755
Filename
1049755
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