Title :
Characterization of a Novel 100-Channel Silicon Photomultiplier—Part I: Noise
Author :
Finocchiaro, Paolo ; Pappalardo, Alfio ; Cosentino, Luigi ; Belluso, Massimiliano ; Billotta, Sergio ; Bonanno, Giovanni ; Carbone, Beatrice ; Condorelli, Giovanni ; Mauro, Salvatore Di ; Fallica, Giorgio ; Mazzillo, Massimo ; Piazza, Alessandro ; Sanfili
Author_Institution :
Lab. Naz. del Sud, INFN, Catania
Abstract :
In this paper, we present the results of the first noise characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon avalanche photodiode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to R = 45, timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured, as a function of the bias voltage and of the incident photon flux. A dedicated data-analysis procedure was developed that allows one to extract at once the relevant parameters and quantify the noise.
Keywords :
elemental semiconductors; photodetectors; photomultipliers; semiconductor device noise; silicon; 100-channel silicon photomultiplier; Si; bias voltage; data-analysis procedure; incident photon flux; noise characterization; photon-detection efficiency; single-photon resolving power; timing resolution; wavelength 420 nm; Avalanche photodiodes; Cooling; Laboratories; Performance evaluation; Photomultipliers; Photonics; Semiconductor device noise; Silicon; Testing; Timing; Afterpulsing; dark noise; gain; quantum detection efficiency; quenching resistor; silicon photomultiplier (SiPM); single-photon avalanche photodiode (SPAD); single-photon counting;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2003996
