Title :
Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices
Author :
Sonia, G. ; Brunner, F. ; Denker, A. ; Lossy, R. ; Mai, M. ; Opitz-Coutureau, J. ; Pensl, G. ; Richter, E. ; Schmidt, J. ; Zeimer, U. ; Wang, L. ; Weyers, M. ; Wurfl, Joachim ; Trankle, Gunther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin
Abstract :
Operation of AlGaN/GaN HFETs in space was simulated by irradiation with protons and heavy ions at 68 MeV and 2MeV and fluences up to 1013 cm-2. Before and after irradiation dc and pulsed I-V characteristics of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by photoluminescence, X-ray diffraction and Hall measurements before and after irradiation. The results of the material characterization correlate with the device results. High energy (68 MeV) irradiation has no impact on device performance while high fluences at lower energy (2 MeV) result in degradation
Keywords :
Hall effect; III-V semiconductors; X-ray diffraction; aluminium compounds; gallium compounds; high electron mobility transistors; photoluminescence; proton effects; wide band gap semiconductors; 2 MeV; 68 MeV; AlGaN-GaN; HFET devices; Hall measurements; X-ray diffraction; heavy ion irradiation effects; material characterization; photoluminescence; proton irradiation effects; pulsed I-V characteristics; thick semiconductor reference layer; Aluminum gallium nitride; Degradation; Gallium nitride; HEMTs; MODFETs; Photoluminescence; Protons; Pulse measurements; Thickness measurement; X-ray diffraction; Heavy ions; modulation-doped field effect transistors (MODFETs); photoluminescence; protons; radiation effects; x-ray measurements;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.885006
