• DocumentCode
    871606
  • Title

    Flash X-Ray Testing of ER3400 EAROMS

  • Author

    Abare, W.E. ; Riley, R.M. ; Thygeson, T.L.

  • Author_Institution
    Harris Corporation Government Aerospace Systems Division P. O. Box 94000 Melbourne, Fl 32902
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4285
  • Lastpage
    4289
  • Abstract
    Flash X-ray testing of ER3400 MNOS memories demonstrates their memory volatility. Flash X-ray test data is presented for four bias conditions and two write pulse widths. A simple electrical screening technique is described which increases the memory vulnerability threshold. Permanent shifts in access time and memory reference voltage from accumulated doses are discussed.
  • Keywords
    Aerospace testing; Defense industry; EPROM; Government; Instruments; Logic devices; Manufacturing; Read-write memory; Space vector pulse width modulation; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333124
  • Filename
    4333124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871606