DocumentCode :
871622
Title :
SEU Error Signature Analysis of Gbit/s SiGe Logic Circuits Using a Pulsed Laser Microprobe
Author :
Sutton, Akil K. ; Krithivasan, Ramkumar ; Marshall, Paul W. ; Carts, Martin A. ; Seidleck, Christina ; Ladbury, Ray ; Cressler, John D. ; Marshall, Cheryl J. ; Currie, Steve ; Reed, Robert A. ; Niu, Guofu ; Randall, Barbara ; Fritz, Karl ; McMorrow, Dale
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Volume :
53
Issue :
6
fYear :
2006
Firstpage :
3277
Lastpage :
3284
Abstract :
We present, for the first time, an analysis of the error signatures captured during pulsed laser microprobe testing of high-speed digital SiGe logic circuits. 127-bit shift registers, configured using various circuit level latch hardening schemes and incorporated into the circuit for radiation effects self test serve as the primary test vehicle. Our results indicate significant variations in the observed upset rate as a function of strike location and latch architecture. Error information gathered on the sensitive transistor nodes within the latches and characteristic upset durations agree well with recently reported heavy-ion microprobe data. These results support the growing credibility in using pulsed laser testing as a lower-cost alternative to heavy-ion microprobe analysis of sensitive device and circuit nodes, as well as demonstrate the efficiency of the autonomous detection and error approach for high speed bit-error rate testing. Implications for SEU hardening in SiGe are addressed and circuit-level and device-level Radiation Hardening By Design recommendations are made
Keywords :
CMOS logic circuits; Ge-Si alloys; error statistics; ion beam effects; radiation hardening (electronics); semiconductor device models; semiconductor device testing; semiconductor materials; shift registers; 127-bit shift registers; CMOS; SEU error signature analysis; SEU hardening; SiGe; autonomous detection; built-in self-test; circuit level latch hardening; circuit nodes; heavy-ion microprobe data; high speed bit-error rate testing; high-speed digital SiGe logic circuits; primary test vehicle; pulsed laser microprobe testing; radiation effects; radiation hardening; sensitive transistor nodes; Automatic testing; Circuit testing; Error analysis; Germanium silicon alloys; Latches; Logic circuits; Logic testing; Optical pulses; Pulse circuits; Silicon germanium; Built-in self-test; circuit level hardening; high- speed bit-error rate testing; pulsed laser testing; silicon-germanium (SiGe); single-event effects (SEU);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2006.886232
Filename :
4033915
Link To Document :
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