Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band

Author

Chen, Y.K. ; Radulescu, D.C. ; Wang, G.W. ; Najjar, F.E. ; Eastman, L.F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

9

Issue

1

fYear

1988

Firstpage

1

Lastpage

3

Abstract

The authors report the observation of high-field instability at room temperature with oscillation frequency as high as 24 GHz in GaAs/InGaAs/AlGaAs double-heterojunction-MODFETs (DH-MODFETs) of 1.2 mu m gate length. Negative drain differential resistance was also observed in these devices under various forward gate biases. The nature of this instability is believed to be caused by the efficient removal of the real-space transferred hot two-dimensional electrons in the AlGaAs layer through the forward-biased Schottky gate. A tuned oscillator, with a fundamental oscillation frequency as high as 19.68 GHz, has also been demonstrated at a gate bias of 1.3 V.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; high field effects; hot carriers; indium compounds; microwave oscillators; negative resistance; solid-state microwave circuits; solid-state microwave devices; 1.2 micron; 19.68 GHz; 24 GHz; GaAs-InGaAs-AlGaAs; K band; Schottky gate; double-heterojunction-MODFETs; forward gate biases; gate length; high-frequency high-field instability; hot two-dimensional electrons; negative drain differential resistance; oscillation frequency; tuned oscillator; Electrons; Frequency measurement; Gallium arsenide; HEMTs; Heterojunctions; Indium gallium arsenide; MODFETs; Microwave FETs; Microwave frequencies; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.20394

Filename

20394