Title :
The effect of impact ionization induced bipolar action on n-channel hot-electron degradation
Author :
Krieger, Gadi ; Cuevas, Peter P. ; Misheloff, Michael N.
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
The relationship between the total impact ionization rate and the measured substrate current is analyzed, using short-channel NMOS devices. It is shown that holes that are injected into the source and turn on the parasitic source-bulk-drain bipolar may actually be a significant portion of the total impact ionization current. The authors explain how the commonly used model, which ignores this bipolar effect, can lead to incorrect predictions regarding hot-electron degradation. A related criterion for maximum source-drain voltage during accelerated stress is discussed and justified.<>
Keywords :
hot carriers; impact ionisation; insulated gate field effect transistors; life testing; semiconductor device models; semiconductor device testing; accelerated stress; hole injection; impact ionization induced bipolar action; maximum source-drain voltage; model; n-channel hot-electron degradation; short-channel NMOS devices; substrate current; Acceleration; Current measurement; Degradation; Impact ionization; MOS devices; Predictive models; Stress; Substrate hot electron injection; Switches; Voltage;
Journal_Title :
Electron Device Letters, IEEE
