Fabrication and Thermal Analysis of Wafer-Level Light-Emitting Diode Packages

Author

Kang, Jeung-Mo ; Choi, Jeong-Hyeon ; Kim, Du-Hyun ; Kim, Jae-Wook ; Song, Yong-Seon ; Kim, Geun-Ho ; Han, Sang-Kook

Author_Institution

LED R&D Lab., LG Electron. Inst. of Technol., Seoul

Volume

29

Issue

10

fYear

2008

Firstpage

1118

Lastpage

1120

Abstract

Wafer-level packaged light-emitting diodes (LEDs) are useful for the high-power applications such as back light unit and general solid-state lighting due to the compactness and integrated fabrication process. In this letter, wafer-level packaged LEDs with red, green, and blue multichips were fabricated, and the thermal characteristics of wafer-level packaged LEDs with multichips such as thermal resistance and junction temperature are investigated using both serial and matrix measurement methods.

Keywords

light emitting diodes; lighting; multichip modules; semiconductor device measurement; semiconductor device packaging; thermal management (packaging); thermal resistance; wafer level packaging; back light unit; blue multichips; green multichips; integrated fabrication process; junction temperature; light-emitting diode packages; matrix measurement method; red multichips; serial measurement method; solid-state lighting; thermal analysis; thermal resistance; wafer-level packaged LED; Electronic packaging thermal management; Light emitting diodes; Optical device fabrication; Semiconductor device modeling; Silicon; Sputter etching; Temperature; Thermal resistance; Wafer bonding; Wafer scale integration; Junction temperature; light-emitting diodes (LEDs); thermal resistance; wafer-level package;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2002749

Filename

4631446