Equivalent Circuit Model for Si Avalanche Photodetectors Fabricated in Standard CMOS Process

Author

Lee, Myung-Jae ; Kang, Hyo-Soon ; Choi, Woo-Young

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul

Volume

29

Issue

10

fYear

2008

Firstpage

1115

Lastpage

1117

Abstract

We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and photodetection frequency responses.

Keywords

CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; equivalent circuits; frequency response; silicon; CMOS-compatible avalanche photodetectors; Si; Si avalanche photodetectors; avalanche delay; equivalent circuit model; parasitic effects; photodetection frequency responses; photogenerated carriers; standard CMOS process; CMOS process; CMOS technology; Delay effects; Equivalent circuits; Impedance; Information technology; Millimeter wave technology; Optical fiber communication; Photodetectors; Semiconductor device modeling; Avalanche photodetector; CMOS; RF peaking; equivalent circuit model;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000717

Filename

4631462