• DocumentCode
    871981
  • Title

    Charge Collection in Test Structures

  • Author

    Campbell, A.B. ; Knudson, A.R. ; Shapiro, P. ; Patterson, D.O. ; Seiberling, L.E.

  • Author_Institution
    Naval Research Laboratory Washington, D. C. 20375
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4486
  • Lastpage
    4492
  • Abstract
    Charge collection processes have been studied as a function of ion type and incident angle of the impinging ion on silicon diffused junction structures on various epitaxial layer thicknesses.
  • Keywords
    Charge measurement; Circuits; Current measurement; Laboratories; Preamplifiers; Silicon; Single event upset; Substrates; Testing; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333159
  • Filename
    4333159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871981