DocumentCode
871986
Title
A Single-Ended Resistive 
-Band AlGaN/GaN HEMT MMIC Mixer
Author
Südow, Mattias ; Andersson, Kristoffer ; Fagerlind, Martin ; Thorsell, Mattias ; Nilsson, Per-Åke ; Rorsman, Niklas
Author_Institution
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg
Volume
56
Issue
10
fYear
2008
Firstpage
2201
Lastpage
2206
Abstract
A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technology has been designed, processed, and characterized. The design is based on a 4 times 100 mum AlGaN/GaN HEMT in a single-ended circuit topology. The mixer has an IF bandwidth of 2 GHz with a conversion loss (CL) of < 8 dB across the X-band with a minimum CL of 6.9 dB at 11 GHz. The large-signal performance is exemplified by IIP 3 levels of 22 and 30 dBm at local oscillator drive levels of 15 and 23 dBm, respectively. A minimum noise figure of 9 dB is achieved at 11.6 GHz.
Keywords
III-V semiconductors; MMIC mixers; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation distortion; network topology; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; MMIC mixers; frequency 11 GHz; frequency 11.6 GHz; frequency 2 GHz; high electron mobility transistors; intermodulation distortion; linear X-band mixer; monolithic microwave integrated circuit; noise; single-ended circuit topology; Gallium nitride (GaN); MMIC mixers; intermodulation distortion; monolithic microwave integrated circuit (MMIC);
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2008.2001958
Filename
4631467
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