• DocumentCode
    872009
  • Title

    Dose Dependence of Single Event Upset Rate in MOS dRAMS

  • Author

    Knudson, A.R. ; Campbell, A.B. ; Hammond, E.C.

  • Author_Institution
    Naval Research Laboratory Washington, D. C. 20375
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4508
  • Lastpage
    4513
  • Abstract
    The upset sensitivity of MOS dynamic RAMs has been found to decrease as a result of total dose irradiation, both for cobalt-60 gammas and MeV helium ions, up to the point where device failure is imminent. Device failure levels have been compared for cobalt-60 gammas, and MeV helium ions and protons. It has been found that in terms of rad(Si) necessary to cause device failure, cobalt-60 was more effective than protons which were more effective than helium ions.
  • Keywords
    DRAM chips; Degradation; Electron traps; Gamma rays; Helium; Laboratories; Manufacturing; Protons; Single event upset; System testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333162
  • Filename
    4333162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=872009