Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers

Author

Thadesar, Paragkumar A. ; Bakir, Muhannad S.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

Volume

3

Issue

7

fYear

2013

fDate

Jul-13

Firstpage

1130

Lastpage

1137

Abstract

This paper presents a silicon interposer interconnection solution featuring novel electrical and optical through-silicon vias (TSVs). The copper-based electrical TSVs include polymer-clad TSVs and polymer-embedded vias (copper vias embedded in polymer wells within a low resistivity silicon substrate). Fabrication of the novel electrical TSVs is shown along with high-frequency measurements for polymer-embedded vias. Optical TSVs are fabricated in parallel with the polymer-clad TSVs to provide chip-to-motherboard optical access at the 850-nm wavelength. Optical loss measurements are performed for the fabricated optical TSVs.

Keywords

copper; optical interconnections; optical polymers; silicon; three-dimensional integrated circuits; chip-to-motherboard optical access; optical TSV; optical loss measurements; photodefined polymer-enhanced through-silicon vias; polymer wells; polymer-clad TSV; polymer-embedded vias; silicon interposer interconnection; wavelength 850 nm; Electrical loss measurements; electrical resistance measurements; lithography; optical interconnections; optical loss measurements; through-silicon vias (TSVs);

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2013.2261122

Filename

6523083