DocumentCode
872659
Title
Low-light-level photoconductivity in semi-insulating GaAs
Author
Nakajima, Kensuke ; Hirohata, Toru ; Kan, Haibin ; Mizushima, Y.
Author_Institution
Hamamatsu Photonics, Japan
Volume
28
Issue
22
fYear
1992
Firstpage
2046
Lastpage
2048
Abstract
A peculiar photoconductive property with a positive temperature coefficient in a semi-insulating GaAs photodiode is found in the room temperature range. Also, the low-light-level photoconductivity is higher than usual. The authors suggest that an ionised-impurity scattering mechanism is dominant. Theoretical responsivity is compared with the measured value.
Keywords
III-V semiconductors; gallium arsenide; photoconductivity; photodetectors; photodiodes; GaAs:Cr,O substrate; MSM photodetector; ionised-impurity scattering; low-light-level photoconductivity; positive temperature coefficient; responsivity; room temperature range; semiinsulating GaAs photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921311
Filename
204571
Link To Document