Title :
Modeling and simulation of insulated-gate field-effect transistor switching circuits
Author :
Shichman, Harold ; Hodges, David A.
fDate :
9/1/1968 12:00:00 AM
Abstract :
A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of computer simulations using the new equivalent circuit are in close agreement with experimental observations. As an example of a practical application, simulation results are shown for an integrated circuit IGFET memory cell.
Keywords :
Computer-aided circuit analysis; computer-aided circuit analysis; Application software; Application specific integrated circuits; Circuit simulation; Computational modeling; Computer aided analysis; Computer simulation; Equivalent circuits; FETs; Insulation; Switching circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1968.1049902
