Title :
Dielectrically isolated lateral emitter switched thyristor
Author :
Baliga, B. Jayant ; Huang, Y.S.
Author_Institution :
Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA
Abstract :
The operation of a 500 V dielectrically isolated lateral emitter switched thyristor (DI-LEST) is described for the first time. Experimental devices exhibit an on-state voltage drop of 2.35 V at a current density of 100 A/cm2, and a maximum controllable current density of about 200 A/cm2. The on-state voltage drop decreases with increasing drift layer thickness consistent with the uniform lateral current flow observed in two-dimensional numerical simulations.
Keywords :
current density; electric potential; semiconductor switches; thyristors; 500 V; RESURF design; current density; dielectrically isolated lateral emitter switched thyristor; drift layer thickness; maximum controllable current density; on-state voltage drop; two-dimensional numerical simulations; uniform lateral current flow;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921314
