• DocumentCode
    872726
  • Title

    DC analysis of an MOS source follower

  • Author

    Frohman-Bentchkowsky, D. ; Vadasz, L.

  • Volume
    3
  • Issue
    3
  • fYear
    1968
  • Firstpage
    306
  • Lastpage
    307
  • Abstract
    The source follower operation of a normally off MOS device is analyzed. Input-output relationships in terms of applied voltages and device parameters are derived. Experimental verifications of the foregoing theory are included.
  • Keywords
    Field effect devices; field effect devices; Doping; Equations; Impurities; Leakage current; Logic circuits; Logic devices; MOS devices; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1968.1049908
  • Filename
    1049908
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=872726