• DocumentCode
    872749
  • Title

    Commercial impact of silicon carbide

  • Author

    Singh, Ranbir ; Pecht, Michael

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Gaithersburg, MD
  • Volume
    2
  • Issue
    3
  • fYear
    2008
  • Firstpage
    19
  • Lastpage
    31
  • Abstract
    Evolutionary improvements in silicon (Si) power devices through better device designs, processing techniques, and material quality have led to great advancements in power systems. However, many commercial power devices are now approaching the theoretical performance limits offered by the Si material in terms of the capability to block high voltage, provide low on-state voltage drop, and switch at a high frequency. This article presents the opportunities and challenges in realizing the full potential of SiC power devices.
  • Keywords
    power semiconductor devices; silicon compounds; SiC; power devices; silicon carbide commercial impact; Insulated gate bipolar transistors; Motor drives; Photonic band gap; Power MOSFET; Schottky diodes; Silicon carbide; State estimation; Temperature; Thermal conductivity; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1932-4529
  • Type

    jour

  • DOI
    10.1109/MIE.2008.928617
  • Filename
    4632160