DocumentCode
872749
Title
Commercial impact of silicon carbide
Author
Singh, Ranbir ; Pecht, Michael
Author_Institution
Nat. Inst. of Stand. & Technol., Gaithersburg, MD
Volume
2
Issue
3
fYear
2008
Firstpage
19
Lastpage
31
Abstract
Evolutionary improvements in silicon (Si) power devices through better device designs, processing techniques, and material quality have led to great advancements in power systems. However, many commercial power devices are now approaching the theoretical performance limits offered by the Si material in terms of the capability to block high voltage, provide low on-state voltage drop, and switch at a high frequency. This article presents the opportunities and challenges in realizing the full potential of SiC power devices.
Keywords
power semiconductor devices; silicon compounds; SiC; power devices; silicon carbide commercial impact; Insulated gate bipolar transistors; Motor drives; Photonic band gap; Power MOSFET; Schottky diodes; Silicon carbide; State estimation; Temperature; Thermal conductivity; Thyristors;
fLanguage
English
Journal_Title
Industrial Electronics Magazine, IEEE
Publisher
ieee
ISSN
1932-4529
Type
jour
DOI
10.1109/MIE.2008.928617
Filename
4632160
Link To Document