Metal-oxide-semiconductor circuits of higher orders of complementarity

Higher orders of complementarity of MOST circuits are obtained when the devices used differ not only in the dominant charge species, such as in n-channel and p-channel units, but also in the mode of control of channel conductance, such as in depletion mode and enhancement mode. Some of these circuits in a `hook´ connection displayed unusual static volt-ampere characteristics, with `double points.´ The third order of complementarity circuits made it possible to obtain five different classes of double points. A correlation between the orders of complementarity, the bias, and the device parameters has been found analytically and experimentally.