DocumentCode
873151
Title
Noise contribution of the offset-gate i.g.f.e.t. with an additional gate electrode
Author
Dill, H.G. ; Dill, H.G.
Author_Institution
Swiss Federal Institute of Technology, Department of Advanced Electrical Engineering, Zurich, Switzerland
Volume
3
Issue
7
fYear
1967
fDate
7/1/1967 12:00:00 AM
Firstpage
341
Lastpage
342
Abstract
The 1/f noise power of the offset-gate i.g.f.e.t. with an additional gate electrode (i.g.t.) is, under certain bias conditions, considerably lower in comparison to the full-gate i.g.f.e.t. of similar dimensions. This behaviour can be explained by a field dependent 1/f noise component from the pinchoff region. The i.g.t. allows the separation of the 1/f noise from the channel region and from the pinchoff region.
Keywords
electron device noise; noise measurement; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670261
Filename
4207314
Link To Document