DocumentCode :
87320
Title :
A High Density 250 
Junction Temperature SiC Power Module Development
Author :
Puqi Ning ; Fei Wang ; Di Zhang
Author_Institution :
Inst. of Electr. Eng., Beijing, China
Volume :
2
Issue :
3
fYear :
2014
fDate :
Sept. 2014
Firstpage :
415
Lastpage :
424
Abstract :
A high temperature wirebond-packaged phase-leg power module was designed, developed, and tested. Details of the layout, gate drive, and cooling system designs are described. Continuous power tests confirmed that the designed high-density power module can be successfully operated with 250 °C junction temperature. The power module was further utilized in an all-SiC rectifier system that achieves a 2.78 kW/lb power density.
Keywords :
integrated circuit design; power integrated circuits; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; high temperature wirebond-packaged; junction temperature; phase-leg power module; temperature 250 degC; Cooling; Layout; Logic gates; Multichip modules; Silicon; Silicon carbide; Switches; High-temperature techniques; Semiconductor device packaging; semiconductor device packaging; silicon carbide;
fLanguage :
English
Journal_Title :
Emerging and Selected Topics in Power Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
2168-6777
Type :
jour
DOI :
10.1109/JESTPE.2013.2290054
Filename :
6658832
Link To Document :
