• DocumentCode
    873344
  • Title

    A Variational Approach to the Two-Dimensional Nonlinear Poisson´s Equation for the Modeling of Tunneling Transistors

  • Author

    Shen, Chen ; Ong, Sern-Long ; Heng, Chun-Huat ; Samudra, Ganesh ; Yeo, Yee-Chia

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    29
  • Issue
    11
  • fYear
    2008
  • Firstpage
    1252
  • Lastpage
    1255
  • Abstract
    In this letter, we report a new approach to treat the 2-D nonlinear Poisson´s equation in the context of MOS devices and discuss its application in the modeling of tunneling field-effect transistors (T-FET). It is revealed that the narrowing of tunneling barrier in T-FET has different mechanisms before and after inversion layer is formed. Closed-form equation is obtained to describe the barrier narrowing in the presence of inversion layer.
  • Keywords
    MOSFET; Poisson equation; semiconductor device models; variational techniques; MOS devices; inversion layer; semiconductor device modeling; tunneling barrier; tunneling field-effect transistors; two-dimensional nonlinear Poisson equation; variational approach; Semiconductor device modeling; tunnel transistors; variational methods;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2005517
  • Filename
    4633627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=873344