Low Distortion 50 GSamples/s Track-Hold and Sample-Hold Amplifiers

Author

Daneshgar, Saeid ; Griffith, Zach ; Seo, Munkyo ; Rodwell, Mark J. W.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA

Volume

49

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

2114

Lastpage

2126

Abstract

We report 50 GSamples/s track-hold amplifier (THA) and sample-hold amplifier (SHA) designed and fabricated in a 250 nm InP double heterojunction bipolar transistor (DHBT) technology. Because the base-emitter junction reverse breakdown voltage is low in the process technology employed, the circuits use a base-collector junction diode as the switching element in the signal path. Operating with -5 V and -2.5 V supplies, the THA achieves > +16 dBm input-referred third-order intercept (IIP3) at signal frequencies below 22 GHz, while the SHA achieves IIP3 > +17 dBm for 2-22 GHz inputs.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; microwave amplifiers; sample and hold circuits; DHBT; InP; SHA; THA; base-collector junction diode; base-emitter junction reverse breakdown voltage; double heterojunction bipolar transistor; frequency 2 GHz to 22 GHz; sample-hold amplifiers; size 250 nm; third-order intercept; track-hold amplifiers; voltage -2.5 V; voltage -5 V; DH-HEMTs; Indium phosphide; Junctions; Nonlinear distortion; Schottky diodes; Switches; Analog-to-digital converter (ADC); InP technology; nonlinearity analysis; sample-hold amplifier (SHA); track-hold amplifier (THA);

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2014.2329843

Filename

6851218