DocumentCode :
873529
Title :
An efficient noise isolation technique for SOC application
Author :
Chen, Tung-Sheng ; Lee, Chih-Yuan ; Kao, Chin-Hsing
Author_Institution :
Dept. of Electr. Eng., Nat. Defense Univ. Tahsi, Taoyuan, Taiwan
Volume :
51
Issue :
2
fYear :
2004
Firstpage :
255
Lastpage :
260
Abstract :
A highly efficient CMOS process technique of suppressing the transmission of high-frequency noise induced by spiral inductors, ultrafast-switching MOS gates, or supply ringing through silicon substrate has been attained. The isolated n+-pocket structure formed by a promising process technique designed in this work has proven to be most effective in guarding vulnerable devices from remnant high-frequency noise roaming in the substrate among the structures we have used in the experiment: p+ guard ring, proton implant, and pocket structures. Excellent noise suppression efficiency of -75 dB with source and sense separated by only 21 μm at 1 GHz has been achieved for the test keys with n+-pocket structure in contrast to -38 dB at 1GHz of unprotected devices. The isolated n+-pocket structure has manifested itself to possess the potential of becoming a key technology for mixed-mode circuits in future success of Si-based wireless communication system-on-chip (SOC) applications.
Keywords :
CMOS integrated circuits; integrated circuit noise; mixed analogue-digital integrated circuits; semiconductor materials; silicon-on-insulator; system-on-chip; very high speed integrated circuits; 1 GHz; CMOS process; SOC application; Si-based wireless communication; guard ring; high-frequency noise transmission suppression; mixed-mode circuits; noise isolation technique; pocket structures; proton implant; remnant high-frequency noise; silicon substrate; spiral inductors; system-on-chip; ultrafast-switching MOS gates; vulnerable devices; CMOS process; Circuit testing; Implants; Inductors; Isolation technology; Process design; Protons; Roaming; Silicon; Spirals;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.821565
Filename :
1262655
Link To Document :
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