Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs

Author

Zeng, Lang ; Xia, Zhiliang ; Du, Gang ; Kang, Jinfeng ; Han, Ruqi Q. ; Liu, Xiaoyan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

Volume

8

Issue

1

fYear

2009

Firstpage

10

Lastpage

15

Abstract

In this paper, we analyze the gate-induced image force barrier lowering in a 45-nm-gate-length ultra-thin-body silicon-on-insulator structure by using 2D full-band self-consistent ensemble Monte Carlo simulation with both tunneling current and thermal emission current. Results show that gate-induced barrier lowering has a very significant influence on the drive current. The influence of gate voltage, Schottky barrier height, spacer and channel doping concentration is also investigated and a theoretical analysis is presented.

Keywords

Monte Carlo methods; Schottky barriers; field effect transistors; semiconductor device models; silicon-on-insulator; tunnelling; 2D full-band self-consistent ensemble Monte Carlo simulation; Schottky barrier FETs; Schottky barrier height; Si; channel doping concentration; drive current; gate voltage; gate-induced image force barrier lowering; thermal emission current; tunneling current; ultrathin-body silicon-on-insulator structure; Image force; Monte Carlo simulation; SB FETs (SB FETs); Schottky barrier (SB) lowering;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2008.2006164

Filename

4633649