Vertical tunnel field-effect transistor

The realization of a novel vertically grown tunnel field-effect transistor (FET) with several interesting properties is presented. The operation of the device is shown by means of both experimental results as well as two-dimensional computer simulations. This device consists of a MBE-grown, vertical p-i-n structure. A vertical gate controls the band-to-band tunneling width, and hence the tunneling current. Both n-channel and p-channel current behavior is observed. A perfect saturation in drain current-voltage (I_D--V_DS) characteristics in the reverse-biased condition for n-channel, an exponential and nearly temperature independent drain current-gate voltage (I_D--V_GS) relation for both subthreshold, as well as on-region, and source-drain off-currents several orders of magnitude lower then the conventional MOSFET are achieved. In the forward-biased condition, the device shows normal p-i-n diode characteristics.