• DocumentCode
    873585
  • Title

    Electrical Failure Analysis of Au Nanowires

  • Author

    Huang, Qiaojian ; Lilley, Carmen M. ; Divan, Ralu ; Bode, Matthias

  • Author_Institution
    Dept. of Mech. & Ind. Eng., Univ. of Illinois at Chicago, Chicago, IL
  • Volume
    7
  • Issue
    6
  • fYear
    2008
  • Firstpage
    688
  • Lastpage
    692
  • Abstract
    Au nanowires were patterned with electron beam (e-beam) lithography and fabricated with an Au film deposited by e-beam evaporation. Two failure analyses were performed: failure current density and electromigration. It was experimentally found that the failure current density increases for the smaller width wire. Size and surface effects on the failure current density were explored. Also, in situ electromigration studies on Au nanowires were performed to characterize the activation energy of Au nanowires with a SEM.
  • Keywords
    electromigration; electron beam deposition; electron beam lithography; failure analysis; gold; integrated circuit interconnections; metallic thin films; nanowires; reliability; scanning electron microscopy; size effect; vacuum deposition; Au; SEM; activation energy; electrical failure analysis; electromigration; electron beam evaporation; electron beam lithography; failure current density; gold film; gold nanowires; nanowire interconnect is reliability; size effects; surface effects; Electrical properties; electromigration; failure mechanism; nanowires;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2008.2006166
  • Filename
    4633651