Effects of instability on low-frequency characteristics of CdSe thin-film transistors

Instability in CdSe-SiO2 t.f.t.s is attributed to ion drift within the insulator. The combination of source-drain-potential distribution and applied voltages greatly affect the amount of drift present and change the operating characteristics of t.f.t.s under actual operating conditions. Until stability is greatly increased, their usefulness will be limited to only those frequency applications in which these effects are negligible.