DocumentCode
873687
Title
Effects of instability on low-frequency characteristics of CdSe thin-film transistors
Author
Turriff, O.O. ; Koli, S.S.
Author_Institution
University of Saskatchewan, Department of Electrical Engineering, Saskatoon, Canada
Volume
3
Issue
9
fYear
1967
fDate
9/1/1967 12:00:00 AM
Firstpage
408
Lastpage
410
Abstract
Instability in CdSe-SiO2 t.f.t.s is attributed to ion drift within the insulator. The combination of source-drain-potential distribution and applied voltages greatly affect the amount of drift present and change the operating characteristics of t.f.t.s under actual operating conditions. Until stability is greatly increased, their usefulness will be limited to only those frequency applications in which these effects are negligible.
Keywords
cadmium compounds; films; frequency; insulators; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670317
Filename
4207366
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