DocumentCode
874034
Title
Interlayer coupling in ferroelectric bilayer and superlattice heterostructures
Author
Zhong, Shan ; Alpay, S. Pamir ; Roytburd, Alexander L. ; Mantese, Joseph V.
Author_Institution
Dept. of Mater. Sci. & Eng., Connecticut Univ., Storrs, CT
Volume
53
Issue
12
fYear
2006
fDate
12/1/2006 12:00:00 AM
Firstpage
2349
Lastpage
2356
Abstract
Ferroelectric multilayers and superlattices have gained interest for dynamic random access memory (DRAM) applications and as active elements in tunable microwave devices in the telecommunications industry. A number of experimental studies have shown that these materials have many peculiar properties which cannot be described by a simple series connection of the individual layers that make up the heterostructures. A thermodynamic analysis is presented to demonstrate that ferroelectric multilayers interact through internal elastic, electrical, and electromechanical fields and the strength of the coupling can be quantitatively described using Landau theory of phase transformations, theory of elasticity, and principles of electrostatics. The theoretical analysis shows that compositional variations across ferroelectric bilayers result in a broken spatial inversion symmetry that can lead to asymmetric thermodynamic potentials favoring one ferroelectric ground state over the other. Furthermore, the thermodynamic modeling indicates that there is a strong electrostatic coupling between the layers that leads to the suppression of ferroelectricity at a critical paraelectric layer thickness for ferroelectric-paraelectric bilayers. This bilayer is expected to have a gigantic dielectric response similar to the dielectric anomaly near Curie-Weiss temperature in homogeneous ferroelectrics at this critical thickness
Keywords
dielectric polarisation; elasticity; electrostatics; ferroelectric materials; ferroelectric transitions; solid-state phase transformations; superlattices; Curie-Weiss temperature; DRAM application; Landau theory; active elements; broken spatial inversion symmetry; critical paraelectric layer thickness; dynamic random access memory; elasticity; electrical field; electromechanical field; electrostatic coupling; electrostatics; ferroelectric bilayer; ferroelectric ground state; ferroelectric-paraelectric bilayer; ferroelectricity; interlayer coupling; internal elastic field; phase transformation; superlattice heterostructure; telecommunications industry; thermodynamic analysis; tunable microwave devices; Communication industry; DRAM chips; Dielectrics; Electrostatics; Ferroelectric materials; Microwave devices; Nonhomogeneous media; Random access memory; Superlattices; Thermodynamics;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2006.183
Filename
4037271
Link To Document