DocumentCode
874043
Title
Electrical properties of a GaAs-W junction grown from the vapour phase
Author
Owen, S.J.T.
Volume
3
Issue
10
fYear
1967
fDate
10/1/1967 12:00:00 AM
Firstpage
448
Lastpage
449
Abstract
The electrical properties of a gallium-arsenide-tungsten diode, in which the gallium arsenide is deposited from the vapour phase on to single-crystal substrates of tungsten, are described. Capacitance/voltage and current/voltage characteristics are given, and the voltage barrier of the junction is calculated.
Keywords
III-V semiconductors; characteristics measurement; gallium arsenide; p-n junctions; semiconductor diodes; semiconductor junctions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670354
Filename
4207404
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