DocumentCode :
874050
Title :
Transistor-surface analysis after secondary breakdown
Author :
Hakim, E.B.
Author_Institution :
U.S. Army Electronics Control, Fort Monmouth, N.J.
Volume :
53
Issue :
9
fYear :
1965
Firstpage :
1226
Lastpage :
1226
Keywords :
Aging; Aluminum; Electric breakdown; Electrons; Gold; Optical devices; Optical variables control; Silicon; Stimulated emission; Surface resistance;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4170
Filename :
1446100
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=874050
