• DocumentCode
    874246
  • Title

    High-Efficiency Subharmonic Oscillations from Silicon Diodes at Frequencies up to 6 GHz

  • Author

    Ying, Robert S. ; Mankarious, Ramzy G. ; Bower, Robert W.

  • Volume
    4
  • Issue
    6
  • fYear
    1969
  • fDate
    12/1/1969 12:00:00 AM
  • Firstpage
    388
  • Lastpage
    391
  • Abstract
    Pulsed operation of Si avalanche diodes in an oscillator circuit has produced efficiencies exceeding 45 percent at frequencies of 2.0 to 3.0 GHz, and 17 percent at 6.4 GHz. The device has a lightly punched-through structure working in a coaxial cavity, which can support both the fundamental IMPATT and its subharmonic frequencies.
  • Keywords
    Microwave oscillators; Oscillators; Diodes; Electron devices; Frequency; Germanium; L-band; Microwave devices; Resonance; Silicon devices; Solid state circuits; Substrates;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1969.1050042
  • Filename
    1050042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=874246