• DocumentCode
    874450
  • Title

    Interaction of technology and performance in complementary symmetry MOS integrated circuits

  • Author

    Ahrons, R.W. ; Gardner, Peter D.

  • Volume
    5
  • Issue
    1
  • fYear
    1970
  • Firstpage
    24
  • Lastpage
    29
  • Abstract
    The performance of COS/MOS integrated circuits depends in large measure upon the processing technology involved in their fabrication. Many limitations of the standard process can be avoided by use of new technologies that provide improved speed and power dissipation. However, selection of a particular fabrication technology must involve consideration of both performance advantages and process complexity.
  • Keywords
    Integrated circuits; Metal-insulator-semiconductor structures; integrated circuits; metal-insulator-semiconductor structures; Capacitance; Contracts; Delay; Fabrication; Failure analysis; Integrated circuit measurements; Integrated circuit technology; Inverters; Microelectronics; Power dissipation;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1970.1050061
  • Filename
    1050061