DocumentCode
874450
Title
Interaction of technology and performance in complementary symmetry MOS integrated circuits
Author
Ahrons, R.W. ; Gardner, Peter D.
Volume
5
Issue
1
fYear
1970
Firstpage
24
Lastpage
29
Abstract
The performance of COS/MOS integrated circuits depends in large measure upon the processing technology involved in their fabrication. Many limitations of the standard process can be avoided by use of new technologies that provide improved speed and power dissipation. However, selection of a particular fabrication technology must involve consideration of both performance advantages and process complexity.
Keywords
Integrated circuits; Metal-insulator-semiconductor structures; integrated circuits; metal-insulator-semiconductor structures; Capacitance; Contracts; Delay; Fabrication; Failure analysis; Integrated circuit measurements; Integrated circuit technology; Inverters; Microelectronics; Power dissipation;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1970.1050061
Filename
1050061
Link To Document