• DocumentCode
    874574
  • Title

    MEMS microwave device with switchable capacitive and inductive states

  • Author

    Li, Luoqing ; Uttamchandani, Deepak

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Strathclyde, Glasgow
  • Volume
    3
  • Issue
    3
  • fYear
    2008
  • fDate
    9/1/2008 12:00:00 AM
  • Firstpage
    77
  • Lastpage
    81
  • Abstract
    A microwave microelectromechanical system (MEMS) device that can be switched between capacitive and inductive states over the frequency range of 1 to 16 GHz is reported. The device has been designed based on coplanar waveguide architecture, and realised in thickly electroplated nickel with front-side bulk micromachining of the substrate using a commercial foundry process. The capacitive-to-inductive switchover has been achieved by changing the gap of the interdigitated comb fingers using a chevron microactuator. Experimental characterisation of the device has been conducted, and capacitances ~0.2 pF in the frequency range of 1-16 GHz have been measured in the ´off´ state (driving voltage of the microactuator is 0 V), whereas inductances ~0.5 nH in the frequency range of 1-16 GHz have been measured in the ´on´ state (driving voltage of the microactuator is ~1 V).
  • Keywords
    capacitors; coplanar waveguides; inductors; micromachining; micromechanical devices; microwave devices; MEMS microwave device; capacitive-inductive switchover; chevron microactuator; commercial foundry process; coplanar waveguide architecture; electroplated nickel; frequency 1 GHz to 16 GHz; front-side bulk micromachining; interdigitated comb fingers; switchable capacitive state; switchable inductive state;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl:20080020
  • Filename
    4634714