• DocumentCode
    874604
  • Title

    Transistor characterization by effective large-signal two-port parameters

  • Author

    Houselander, L.S. ; Chow, H.Y. ; Spence, R.

  • Volume
    5
  • Issue
    2
  • fYear
    1970
  • fDate
    4/1/1970 12:00:00 AM
  • Firstpage
    77
  • Lastpage
    79
  • Abstract
    A method is proposed of transistor characterization by effective large-signal parameters measured under the condition of sinusoidal port voltages. It is anticipated that this form of active-device description will find application in the computer design of narrow-frequency-band constant-amplitude nearly sinusoidal amplifiers and oscillators.
  • Keywords
    Semiconductor device models; Transistors; semiconductor device models; transistors; Admittance; Analog memory; Application software; Circuit analysis; Electrons; Frequency; MOSFET circuits; Microwave transistors; Oscillators; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1970.1050076
  • Filename
    1050076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=874604