DocumentCode :
874963
Title :
Damage Calculations for Devices in the Diagnostic Penetrations of a Fusion Reactor
Author :
Holmes-Siedle, A.G. ; Engholm, B.A. ; Battaglia, J.M. ; Baur, J.F.
Author_Institution :
GA Technologies Inc., San Diego. CA 92138
Volume :
31
Issue :
6
fYear :
1984
Firstpage :
1106
Lastpage :
1112
Abstract :
Degradation of neutron-sensitive devices for fusion diagnostics is calculated as a function of location in ducts through bulk shields. It is shown that single-crystal semiconductor devices, such as n/p silicon diodes, will undergo severe degradation even at the rear of the shield. It will be necessary to replace devices at frequent intervals or withdraw semiconductor parts after a measurement. Device life can be extended by distance, elbows, shortening of exposure. hardening, or a combination thereof.
Keywords :
Degradation; Ducts; Fusion reactors; Inductors; Instruments; Laboratories; Monte Carlo methods; Neutrons; Plasma diagnostics; Plasma measurements;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1984.4333464
Filename :
4333464
Link To Document :
بازگشت