• DocumentCode
    875000
  • Title

    SEU of Complementary GaAs Static Rams Due to Heavy Ions

  • Author

    Zuleeg, R. ; Notthoff, J.K. ; Nichols, D.K.

  • Author_Institution
    McDonnell Douglas Microelectronics Center Huntington Beach, CA 92647
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1121
  • Lastpage
    1123
  • Abstract
    The first measurement of single event upset (SEU) for complementary GaAs static RAMs caused by heavy ions is reported. Upset cross-sections of the circuits for 28 MeV oxygen ions are reported as well as the linear energy transfer (LET) threshold established by using 170 MeV oxygen ions at various angles of beam incidence.
  • Keywords
    Charge measurement; Circuits; Current measurement; Delta modulation; Gallium arsenide; Helium; Oxygen; Random access memory; Read-write memory; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333467
  • Filename
    4333467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875000