Title :
High output power 1540 nm vertical cavity semiconductor optical amplifiers
Author :
Björlin, E.S. ; Kimura, T. ; Chen, Q. ; Wang, C. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
Vertical cavity semiconductor optical amplifiers operating at 1540 nm are presented. The use of AlInGaAs multiple quantum well active regions resulted in record-high saturation output power of +0.5 dBm and 16 dB of fibre-to-fibre gain. These results were achieved in reflection mode operation using optical pumping by a 980 nm semiconductor laser.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical pumping; semiconductor optical amplifiers; surface emitting lasers; 1540 nm; 980 nm; AlInGaAs multiple quantum well active regions; high output power 1540 nm vertical cavity semiconductor optical amplifiers; optical pumping; reflection mode operation; saturation output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040097
