• DocumentCode
    875154
  • Title

    Simple model for electron-hole generation and switching mechanisms in ntype-GaAs diodes

  • Author

    Christensson, S.

  • Volume
    3
  • Issue
    11
  • fYear
    1967
  • fDate
    11/1/1967 12:00:00 AM
  • Firstpage
    507
  • Lastpage
    510
  • Abstract
    The electron-hole generation due to impact ionisation in the domain is calculated using a simple model for domain behaviour in the bulk and at the anode contact. It is shown that, in the bulk, the multiplication is only high enough to fill the hole traps, but, at the anode, avalanche breakdown may occur.
  • Keywords
    energy states; semiconductor diodes; semiconductor junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19670400
  • Filename
    4207926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875154