• DocumentCode
    875250
  • Title

    Analysis of Damage in MOS Devices for Several Radiation Environments

  • Author

    Oldham, T.R.

  • Author_Institution
    US Army Eradcom Harry Diamond Laboratories Adelphi, MD 20783
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1236
  • Lastpage
    1241
  • Abstract
    Recent results on hardened and unhardened CMOS inverters are analyzed. New experimental results indicate that lateral hole transport promotes a large interface state buildup in n-channel devices irradiated with the gate grounded. Other prompt results can be explained by recombination models. Annealing results in hardened oxides can be predicted using linear systems theory.
  • Keywords
    Annealing; Charge carrier processes; Electrons; Interface states; Inverters; MOS capacitors; MOS devices; Protons; Radiation hardening; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333489
  • Filename
    4333489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875250