• DocumentCode
    875348
  • Title

    Device characteristics of Si PMOSFETs with decaborane (B10H14) or elemental B extension implants

  • Author

    Gossmann, H.-J.L. ; Agarwal, A. ; Perel, A.S.

  • Author_Institution
    Axcelis Technol., Beverly, MA, USA
  • Volume
    40
  • Issue
    2
  • fYear
    2004
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    PMOS transistors with coded gate-lengths down to 100 nm have been fabricated using either 5.6 keV 2×1013 cm-2 decaborane (B10H14) or 0.5 keV 2×1014 cm-2 elemental B for the extension implant. DC device characteristics are essentially identical between the two implant processes, indicating that decaborane is a viable alternative to elemental B in this area.
  • Keywords
    MOSFET; boron; boron compounds; doping profiles; ion implantation; semiconductor device measurement; 0.5 keV; 100 nm; 5.6 keV; B10H14 extension implants; DC device characteristics; PMOS transistors; Si PMOSFET; Si:B; Si:B10H14; coded gate-lengths; decaborane extension implants; elemental B extension implants; implant processes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040080
  • Filename
    1263125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875348