Three-terminal bistable low-threshold strained InGaAs/GaAs laser grown on structured substrates for digital modulation

Author

Frateschi, N.C. ; Zhao, H. ; Elliot, J. ; Siala, S. ; Govindarajan, M. ; Nottenburg, R.N. ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

5

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

275

Lastpage

278

Abstract

Strained InGaAs/GaAs quantum-well three-terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current structures formed by the temperature engineered growth (TEG) technique. An on-off switching ratio of 556 was obtained for a 30-mV change in absorber voltage. An optical power contrast ratio of 7.5 was measured with a total DC power consumption of 25.3 mW. These results show a great improvement in the digital (on-off) switching performance of three-terminal lasers with intracavity modulators.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; optical bistability; optical modulation; semiconductor lasers; semiconductor switches; 25.3 mW; InGaAs-GaAs; absorber voltage; bistable laser diodes; digital modulation; low threshold current structures; low-threshold; monolithically integrated intracavity modulators; on-off switching ratio; optical power contrast ratio; quantum-well three-terminal lasers; semiconductors; structured substrates; temperature engineered growth; total DC power consumption; Gallium arsenide; Indium gallium arsenide; Optical bistability; Optical modulation; Power engineering and energy; Power measurement; Quantum well lasers; Temperature; Threshold current; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.205610

Filename

205610